Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Improving quality of cast monocrystalline Si ingot with seed crystal strips and graphite soft felt

Collaborative R&D Between Multicrystalline Silicon Ingots and Battery Efficiency Improvement—effect of Shadow Area in Multicrystalline Silicon Ingots on Cell Efficiency

Evaluation of Large-Scale Recycled Seed for Cast Monocrystalline Silicon: Defect Multiplication Mechanisms and Feasibility

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Effects of impurity barrier layer on the red zone at the bottom of cast monocrystalline Si ingot for solar cells

Higher Quality Mono-Like Cast Silicon with Induced Grain Boundaries

Growth of low-cost and high-quality monocrystalline silicon ingots by using split recycled seeds

Seed-assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells

Seed-Assisted Growth of Cast-Mono Silicon for Photovoltaic Application: Challenges and Strategies

Improve Solar Cell Performance of High-Performance Multicrystalline Silicon Seeded with Low-Cost Compact Nucleation Layer

Improvement of conversion efficiency of multicrystalline silicon solar cells by incorporating reactive ion etching texturing

(Invited) Defects in Cast-Mono Crystalline Silicon

Effects of metal impurities at the edges of cast Si ingot on crystal quality and solar cell performance

Research progress in casting technologies for multicrystalline silicon in solar cells

Multicrystalline Silicon Crystal Assisted by Silicon Flakes As Seeds

Constructing Submicron Textures on Mc-Si Solar Cells Via Copper-Catalyzed Chemical Etching

Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots

Texturization of Cast Multicrystalline Silicon for Solar Cells

Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots During General Solar Cell Processes

Multicrystalline Silicon Assisted by Polycrystalline Silicon Slabs As Seeds

Designing Functional Σ13 Grain Boundaries at Seed Junctions for High-Quality Cast Quasi-Single Crystalline Silicon