Study on Growth Behavior of Twins in Cast Monocrystalline Silicon

Dongli Hu,Jinbing Zhang,Shuai Yuan,Hongrong Chen,Chen Wang,Qi Lei,Deren Yang

DOI: https://doi.org/10.1007/s12633-022-02152-1

IF: 3.4

2022-01-01

Silicon

Abstract:Cast monocrystalline silicon (mono-Si) is a potential photovoltaic substrate material that combines the advantages of Czochralski (CZ) mono-Si and cast multicrystalline silicon (mc-Si). Twins are usually formed during the growth of cast mc-Si, which not only reduces the single crystal area of the cast mono-Si ingot but also introduces a vast number of crystal defects. The behavior of twins in the growth of < 100 > -oriented cast mono-Si and their effects on crystal defects were thoroughly investigated in this study. In addition to that, the nucleation mechanism of the twins, and the relationship between the seed's growth direction and the sidewall crystallographic plane were analyzed. The results show that twin nucleation is related to formation of the {111} facets, within the grooves of the grain boundary, in regions, adjacent to the mono-Si and mc-Si areas. The growth direction of the twins was determined by the angle between the {111} facets and the sidewall plane of the seed. Also, distribution characteristics of the crystal defects during the growth of the twins were examined, as well as origins of the dislocations. The results show that the competition among different twins induced higher local stress concentration, causing the Σ3 twin boundaries to be transformed into high-order twin boundaries, with high interfacial energy. This in turn led to significant deformation, resulting in the formation of a vast number of dislocations in the twins. This consequently led to a significant degradation of crystal quality in the cast mono-Si ingots. The results presented in the study provide new insights into the growth mechanism of twins in mono-Si that can help suppress crystal defects for casting high-quality cast mono-Si ingots.