Abstract:Cast monocrystalline silicon (mono-Si) is a potential photovoltaic substrate material that combines the advantages of Czochralski (CZ) mono-Si and cast multicrystalline silicon (mc-Si). Twins are usually formed during the growth of cast mc-Si, which not only reduces the single crystal area of the cast mono-Si ingot but also introduces a vast number of crystal defects. The behavior of twins in the growth of < 100 > -oriented cast mono-Si and their effects on crystal defects were thoroughly investigated in this study. In addition to that, the nucleation mechanism of the twins, and the relationship between the seed's growth direction and the sidewall crystallographic plane were analyzed. The results show that twin nucleation is related to formation of the {111} facets, within the grooves of the grain boundary, in regions, adjacent to the mono-Si and mc-Si areas. The growth direction of the twins was determined by the angle between the {111} facets and the sidewall plane of the seed. Also, distribution characteristics of the crystal defects during the growth of the twins were examined, as well as origins of the dislocations. The results show that the competition among different twins induced higher local stress concentration, causing the Σ3 twin boundaries to be transformed into high-order twin boundaries, with high interfacial energy. This in turn led to significant deformation, resulting in the formation of a vast number of dislocations in the twins. This consequently led to a significant degradation of crystal quality in the cast mono-Si ingots. The results presented in the study provide new insights into the growth mechanism of twins in mono-Si that can help suppress crystal defects for casting high-quality cast mono-Si ingots.

Control of Dislocation Clusters by Artificially-Introduced Micro-Twins in Cast-Mono Silicon

(Invited) Defects in Cast-Mono Crystalline Silicon

Study on Growth Behavior of Twins in Cast Monocrystalline Silicon

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Interactions Between Dislocations and Penta-Twins in Metallic Nanocrystals

Discrete Twinning Dynamics and Size-Dependent Dislocation-to Twin Transition in Body-Centred Cubic Tungsten

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Defect Control Based on Constitutional Supercooling Effect in Cast Multicrystalline Silicon: Boron-indium Co-Doping

Controlling Dislocation Gliding and Propagation in Quasi-Single Crystalline Silicon by Using <110>-Oriented Seeds

A molecular dynamics study of atomic configurations of dislocations accompanying twins in crystal growth of Si from melt

Twinned Silicon and Germanium Nanocrystals: Formation, Stability and Quantum Confinement

Higher Quality Mono-Like Cast Silicon with Induced Grain Boundaries

Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling The Microscopic Root Cause of Dislocation Generation

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current

Dislocation determination and quality control of industrial casting monocrystalline silicon

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification

Properties of dislocation networks formed by Si wafer direct bonding

Recombination Activity of Sub-Grain Boundaries and Dislocation Arrays in Quasi-Single Crystalline Silicon