Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Controlling Dislocation Gliding and Propagation in Quasi-Single Crystalline Silicon by Using <110>-Oriented Seeds

(Invited) Defects in Cast-Mono Crystalline Silicon

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Designing Functional Σ13 Grain Boundaries at Seed Junctions for High-Quality Cast Quasi-Single Crystalline Silicon

Seed-assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Recombination Activity of Sub-Grain Boundaries and Dislocation Arrays in Quasi-Single Crystalline Silicon

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Dislocation formation in seeds for quasi-monocrystalline silicon for solar cells

Higher Quality Mono-Like Cast Silicon with Induced Grain Boundaries

Multicrystalline Silicon Crystal Assisted by Silicon Flakes As Seeds

Effect of Subgrains on the Performance of Mono-Like Crystalline Silicon Solar Cells

Control of Dislocation Clusters by Artificially-Introduced Micro-Twins in Cast-Mono Silicon

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Orientation Engineering in Low‐Dimensional Crystal‐Structural Materials Via Seed Screening

Development of Studies of Crystallization Structures,Crystal Defects and Impurities in Multicrystalline Silicon by Unidirectional Solidification

Defect Control Based on Constitutional Supercooling Effect in Cast Multicrystalline Silicon: Boron-indium Co-Doping

Influence of Temperature Gradient at Interface on Defect Multiplication in Seed-Assisted Multicrystalline Silicon