Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

(Invited) Defects in Cast-Mono Crystalline Silicon

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Study of dislocation generation and growth orientations in upgraded metallurgical grade multicrystalline silicon

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Impact of Silicon Melt Infiltration on the Quality of Cast Crystalline Silicon

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method

Influence of Defects and Impurities on the Deteriorated Border Region in Multicrystalline Silicon Ingots

Suppression of Dislocations and Twins by Inducing Asymmetrical Grain Boundaries for Casting High-Quality Monocrystalline Silicon Ingot

Dislocation determination and quality control of industrial casting monocrystalline silicon

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Controlling Dislocation Gliding and Propagation in Quasi-Single Crystalline Silicon by Using <110>-Oriented Seeds

An optical microscopy study of dislocations in multicrystalline silicon grown by directional solidification method

Dislocation formation in seeds for quasi-monocrystalline silicon for solar cells

THE IMPACT OF IMPURITIES ON MINORITY CARRIER LIFETIME OF MULTICRYSTALLINE SILICON

Resistivity Distribution of Multicrystalline Silicon Ingot Grown by Directional Solidification

Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots During General Solar Cell Processes