Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Collaborative R&D Between Multicrystalline Silicon Ingots and Battery Efficiency Improvement—effect of Shadow Area in Multicrystalline Silicon Ingots on Cell Efficiency

Improvement of conversion efficiency of multicrystalline silicon solar cells by incorporating reactive ion etching texturing

Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots During General Solar Cell Processes

Effects of metal impurities at the edges of cast Si ingot on crystal quality and solar cell performance

Improving quality of cast monocrystalline Si ingot with seed crystal strips and graphite soft felt

Evaluation of Large-Scale Recycled Seed for Cast Monocrystalline Silicon: Defect Multiplication Mechanisms and Feasibility

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

The Effect and Mechanism of Current Injection to Suppress Light and Elevated Temperature Induced Degradation in P-Type Cast-Mono and Multicrystalline Silicon Passivated Emitter and Rear Cells

(Invited) Defects in Cast-Mono Crystalline Silicon

On the Low Carrier Lifetime Edge Zone in Multicrystalline Silicon Ingots

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Improved performance of GaAs-based micro-solar cell with novel polyimide/SiO 2 /TiAu/SiO 2 structure

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks

Effects of impurities and defects on the distribution of minority carrier lifetime in multi-crystalline silicon

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Conversion Efficiency Enhancement of Multi-Crystalline Si Solar Cells by Using A Micro-Structured Junction

Grain Boundary Engineering of High Performance Multicrystalline Silicon: Control of Iron Contamination at the Ingot Edge

Multicrystalline Silicon Crystal Assisted by Silicon Flakes As Seeds

Growth of low-cost and high-quality monocrystalline silicon ingots by using split recycled seeds

Multicrystalline Silicon Assisted by Polycrystalline Silicon Slabs As Seeds