Abstract:Passivating contact solar cells have gradually become the mainstream cell technology due to their excellent performance, and further improving the conversion efficiency has become a focus of subsequent research. Typically, achieving excellent field-effect passivation and low contact resistivity in doped polycrystalline silicon (poly-Si) requires heavy phosphorus doping. However, this approach can lead to a predicament wherein excessive phosphorus diffuses into the silicon (Si) substrate during annealing, consequently causing recombination losses. In response to this challenge, a structure incorporating an intrinsic amorphous silicon (a-Si (i)) layer within the passivation layers has been introduced. The primary objective of this structure is to retard the diffusion of phosphorus into the Si substrate. This study entails comprehensive characterizations to delve into the underlying mechanisms of films with the integrated a-Si (i) layer, including surface microscopy, active dopants profile, crystallographic structure, elemental distribution, and electrical properties. Finally, we have fabricated the industrial-sized TOPCon solar cells with an average efficiency of 23.83 %, which is 0.25 % higher than that of Baseline counterparts (23.58 %) on the production line. The above results have demonstrated the introduction of a-Si (i) film can be a buffer layer, retarding the diffusion of phosphorus into the Si substrate and obtaining a better passivation effect, enabling us to further tailor the doping profile for high-efficiency solar cells. Our work highlights a promising strategy to improve the performance of TOPCon solar cells, showcasing the substantial potential for implementation in industrial manufacturing.

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