Abstract:Multi-crystalline silicon is widely used for producing low-cost and high-efficiency solar cells. During crystal growth and device fabrication, silicon solar cells contain grain boundaries (GBs) which are preferential segregation sites for atomic impurities such as oxygen atoms. GBs can induce charge carriers recombination significantly reducing carrier lifetimes and therefore they can be detrimental for Si device performance. We studied the correlation between structural, energetic and electronic properties of {\Sigma}3{111} Si GB in the presence of vacancies, strain and multiple O segregation. The study of the structural and energetic properties of GBs in the presence of strain and vacancies gives an accurate description of the complex mechanisms that control the segregation of oxygen atoms. We analysed tensile and compressive strain and we obtained that local tensile strain around O impurities is very effective for segregation. We also studied the role of multiple O impurities in the presence of Si vacancies finding that the segregation is favorite for those structures which have restored tetrahedral covalent bonds. The presence of vacancies attract atomic impurities in order to restore the electronic stability: the interstitial impurity becomes substitutional. This analysis was the starting point to correlate the change of the electronic properties in {\Sigma}3{111}Si GBs with O impurities in the presence of strain and vacancies. For each structure we analysed the density of states and its projection on atoms and states, the band gaps, the segregation energy and their correlation in order to characterise the nature of new energy levels. Actually, knowing the origin of defined electronic states would allow the optimization of materials in order to reduce non-radiative electron-hole recombination avoiding charge and energy losses and therefore improving solar cell efficiency.

Dislocation formation in seeds for quasi-monocrystalline silicon for solar cells

(Invited) Defects in Cast-Mono Crystalline Silicon

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Controlling Dislocation Gliding and Propagation in Quasi-Single Crystalline Silicon by Using <110>-Oriented Seeds

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Impact of Silicon Melt Infiltration on the Quality of Cast Crystalline Silicon

Designing Functional Σ13 Grain Boundaries at Seed Junctions for High-Quality Cast Quasi-Single Crystalline Silicon

Evaluation of Large-Scale Recycled Seed for Cast Monocrystalline Silicon: Defect Multiplication Mechanisms and Feasibility

Recombination Activity of Sub-Grain Boundaries and Dislocation Arrays in Quasi-Single Crystalline Silicon

Dislocation determination and quality control of industrial casting monocrystalline silicon

Suppress of Dislocations Induced by Feedstocks Weight in Cast-Mono Crystalline Silicon

Solute effects on interfacial dislocation emission in nanomaterials: nucleation site competition and neutralization

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Multicrystalline Silicon Crystal Assisted by Silicon Flakes As Seeds

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Control of Dislocation Clusters by Artificially-Introduced Micro-Twins in Cast-Mono Silicon

Seed-assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells

Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies

Characteristics of Thermal Stress Evolution During the Cooling Stage of Multicrystalline Silicon

Study on Growth Behavior of Twins in Cast Monocrystalline Silicon