Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Impact of Silicon Melt Infiltration on the Quality of Cast Crystalline Silicon

Influence of different vacuum conditions on the distribution of insoluble inclusions in a multi-crystalline silicon ingot

A Study on Characterization and Prevention of Shadows in Cast Mono‐Crystalline Silicon Ingots

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Iron Contamination in Cast Quasi-Single Crystalline Silicon Ingots

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Phase and Distribution of Inclusions in Multi-crystalline Silicon Ingot for Solar Wafers

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Non-metallic Particles in Solar Grade Silicon (Sog-Si)

The Hard Inclusions in Multi-crystalline Silicon Ingot and their Formation

Two-peak Characteristic Distribution of Iron Impurities at the Bottom of Cast Quasi-Single-crystalline Silicon Ingot

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

(Invited) Defects in Cast-Mono Crystalline Silicon

Research of Solid-liquid Interface Property During Directional Solidification Process for Multicrystalline Silicon

Interaction of impurity distribution and groove at the micro-zone of solid/liquid interface in silicon

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Effect of the Silicon Nitride Coating of Quartz Crucible on Impurity Distribution in Ingot‐Cast Multicrystalline Silicon