Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

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Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Nitrogen decoration of basal plane dislocations in 4H-SiC

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Defect Revelation and Evaluation of 4h Silicon Carbide by Optimized Molten Koh Etching Method

A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers

Nucleation of Threading Dislocations in 4H-SiC at Early Physical-Vapor-Transport Growth Stage

Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment

Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-SiC

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Nitrogen-Dependent Electronic Properties of Threading Edge Dislocations in 4H-SiC