Abstract:Various nanostructures, such as nanopillars and nanoholes, have served as vital functional components for construction of high-performance electronic and photonic devices. Precise control of nanostructures morphology becomes particularly important. In this study, a facile anisotropic etching approach was proposed based on an inductively coupled plasma-reactive ion etching. The method was applied to realize silicon nanopillars and nanoholes with vertical and smooth trench profiles. Gas mixture of SF6 and C4F8 was adopted in the proposed etching process to enable simultaneous etching and passivation. To protect the trench profiles of silicon nanostructures from high-energy ion bombardment, a bias power source was applied. By properly altering the ratio of SF6 to C4F8, the silicon nanopillars and nanoholes demonstrated highly straight trench profiles. Notably, the smooth nanopillars with low damage were easily realized via the SF6/C4F8 etching step. However, nanoholes suffer from polymer redeposition, ascribed to failure in completely removing residual polymer coatings at the trench sidewalls. To realize nanoholes with smooth sidewalls, a Ar treatment step was introduced to remove residual polymer coatings by enabling an effective physical surface bombardment after the SF6/C4F8 chemical etching step. Through a comprehensive study on effect of Ar treatment on trench profiles of silicon nanoholes, we confirmed that the nanoholes featuring smooth trench profiles can be obtained by properly adjusting the Ar gas flow and treatment time.

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Experimental Study on Evolution of Chemical Structure Defects and Secondary Contaminative Deposition during HF-Based Etching

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Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

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