Abstract:Ultra-thin silicon slicing technology plays a critical role in achieving high-efficiency and low-cost solar cells in the photovoltaic (PV) industry. However, the surface phase evolution of silicon wafers under an ultra-thin slicing process and resulting etching behavior remains unclear. In this study, the surface phase evolution of different surface thicknesses of silicon wafers was carefully studied. As the thickness of silicon wafers became relatively thin, the degree of surface stress-induced amorphous silicon (ST-α-Si) significantly increased. Moreover, the UPS test showed that the ST-α-Si layer had an orbital energy level relatively lower than that in monocrystalline silicon, thereby having lower reduction performance during metal-assisted chemical etching (MACE). A copper deposition experiment was conducted to study the etching hindering effect caused by silicon surface ST-α-Si phases. The result showed that the presence of ST-α-Si adversely affected copper deposition. To improve the MACE uniformity, a pretreatment involving the use of HF/H 2 O 2 mixed solution to remove the surface ST-α-Si layer was investigated. After HF/H 2 O 2 pretreatment, the uniformity of inverted pyramids formed through MACE on the silicon wafer surface was significantly improved. Moreover, the reflectance of the MACE-textured surface was reduced to 7.67% from 10.1% compared with that without pretreatment. Therefore, this study provides reference guidelines and useful approaches for preparing uniform inverted pyramid surfaces using MACE in ultra-thin silicon wafers.

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate Via Pt Nanoparticles-Assisted Chemical Etching

Morphological and Optical Properties of Silicon Nanoholes Produced by Pt-nanoparticles Assisted Chemical Etching

Platinum-Particle-Assisted Etching of Low-, Moderately-, and Highly-Doped p-Type Silicon: Change of Composite Porous Structure

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Preparation of Hydrophobic Porous Silicon by Metal-Assisted Etching with Pd-Catalyst

Deposition of Platinum Nanoparticles on P-Type Macroporous Silicon Wall

N-Type Area of PN Junction Etched in BOE Solution

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Metal-particle-induced, Highly Localized Site-Specific Etching of Si and Formation of Single-Crystalline Si Nanowires in Aqueous Fluoride Solution.

Fabrication and Photocatalytic Properties of Silicon Nanowires by Metal-Assisted Chemical Etching: Effect of H 2 O 2 Concentration

Nano silver-catalyzed chemical etching of polycrystalline silicon wafer for solar cell application

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

Research on Silicon Wafer Surface Phase under the Ultra-thin Slicing Process and Its Etching Hindrance Behavior during Metal-Assisted Chemical Etching

Catalysis of Dispersed Silver Particles on Directional Etching of Silicon