Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Bao Zhu,Wen-Jun Liu,Shi-Jin Ding,David Wei Zhang,Zhongyong Fan

DOI: https://doi.org/10.1021/acs.jpcc.8b07785

2018-01-01

Abstract:Metal-assisted chemical etching (MACE) is a facile process to produce mesoporous silicon compared with conventional stain etching and electrochemical etching. However, less work focuses on the MACE...

What problem does this paper attempt to address?

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate Via Pt Nanoparticles-Assisted Chemical Etching

Bao Zhu,Lian-Jie Li,Qing-Qing Sun,Hong-Liang Lu,Shi-Jin Ding,Wei Zhang

DOI: https://doi.org/10.4028/www.scientific.net/amr.535-537.362

2012-01-01

Advanced Materials Research

Abstract:Metal assisted chemical etching of heavily doped p-type Si(100) wafer was investigated in a solution containing HF and hydrogen peroxide using Pt nanoparticles as catalyst. The Pt nanoparticles were formed on Si(100) substrate by magnetron sputtering and post-deposition annealing. In a solution containing low concentration HF, formation of cylindrical nanoholes are unstable in the early stage of the etching process. After that, nanoholes with diameters ranging from 40 to 50 nm are stably formed in silicon substrate and the calculated growing rate is 60 nm/min. Instead, in a solution containing high concentration HF, cylindrical nanoholes with a diameter of about 10 nm can be stably produced in silicon substrate all the time and the growing rate is increased to as fast as 160 nm/min. In both cases, no Pt nanoparticles are observed at the bottom of the nanoholes. Finally, the underlying mechanisms of the aforementioned phenomena are also discussed.
Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Zhu Bao,Li Lianjie,Ding Shijin,Zhang Wei

DOI: https://doi.org/10.3969/j.issn.1003-353x.2012.09.007

2012-01-01

Abstract:Pt nanoiparticle arrays were formed on the SiO2/Si substrate by rapid thermal annealing of ultra-thin Pt film deposited by magnetic sputtering.Subsequently,the Pt nanoparticles assisted chemical etching of the heavily doped p-type monocrystalline silicon wafers was investigated in the solution of HF and H2O2.The experimental results indicate that,when the concentration of HF is 1.06 mol/L,many Pt island-chains are distributed on the sample surface and no pores are observed.When the concentration of HF is increased to 5.3 mol/L,the sample surface became undulated and uneven,and is covered with a lot of irregular silicon hillocks as well as reduced Pt island-chains.When the concentration of HF is increased to 26.5 mol/L,a lot of pores are observed on the sample surface,and Pt island-chains decreased significantly.Based on the cross-section SEM view,dense mesopores are observed in the silicon wafer,and irregular trenches with Pt island at the bottom as well.Moreover,the formation of trenches is slower than that of mesopores.Finally,the underlying mechanism of the aforementioned phenomena were also discussed.
Thermoelectrical properties of silicon substrates with nanopores synthesized by metal-assisted chemical etching

Yijie Li,Nguyen Van Toan,Zhuqing Wang,Khairul Fadzli Samat,Takahito Ono

DOI: https://doi.org/10.1088/1361-6528/ab8fe1

IF: 3.5

2020-11-06

Nanotechnology

Abstract:A silicon substrate consisting of nanoporous silicon film could enhance the thermoelectric performance of bulk silicon due to its low thermal conductivity. Metal-assisted chemical etching (MACE) is a wet method for fabricating diverse nano/micro structures, which uses a noble metal as the catalyst for etching of semiconductor materials. In this study, we report the thermoelectrical properties of silicon substrates with nanopores in different porosities fabricated by MACE employing Ag nanoparticle as a metal catalyst. Different porosities of the nanoporous silicon layer were obtained by adjusting the deposition time of Ag nanoparticles. The lateral nanopores were found on the surface of the vertical nanopores sidewall caused by Ag nanoparticles. With the increase of the porosity, the surface area of the nanopores sidewall became rougher. In comparison with single-crystal silicon, silicon substrates with nanopores can enhance the thermoelectric figure of merit, ZT, due to the relativity high Seebeck coefficient and low thermal conductivity. However, lower electrical conductivity limits the enhancement of the ZT value. The porosity effect on the thermoelectrical properties of silicon substrates with nanopores was evaluated. The Seebeck coefficient has a maximum value at a porosity of 38% and then decreases at a porosity of 49%, and the electrical conductivity and thermal conductivity decrease with the increase of porosity. At a porosity of 38%, the ZT value of silicon substrates with nanopores can reach approximately 0.02, which is 7.3 times larger than that of the original high-doped single-crystalline silicon. Thus the nanoporous silicon film fabricated by MACE can enhance the thermoelectric performance of the bulk silicon.
Platinum-Particle-Assisted Etching of Low-, Moderately-, and Highly-Doped p-Type Silicon: Change of Composite Porous Structure

Kyohei Azuma,Ayumu Matsumoto,Rin Nishinaka,Shinji Yae

DOI: https://doi.org/10.1149/1945-7111/ad51ab

IF: 3.9

2024-05-30

Journal of The Electrochemical Society

Abstract:Metal-assisted etching (metal-assisted chemical etching) is an efficient method to fabricate porous silicon (Si). When using platinum (Pt) particles as metal catalysts in metal-assisted etching, a composite porous structure of straight macropores formed beneath the Pt particles and a mesoporous layer formed on the entire surface of Si can be fabricated. The formation mechanism of the composite structure is still open to discussion. We previously demonstrated that the ratio of mesoporous layer thickness to macropore depth showed a large value (approximately 1.1) in the case of highly-doped p-Si. In this study, we investigated the composite structure formation by using p-Si substrates with different doping densities and etching solutions with different concentrations of hydrogen peroxide (H2O2). There was not significant difference in the structures formed on low- and moderately-doped Si, despite the large difference in doping density. The ratio of mesoporous layer thickness to macropore depth increased within the range approximately from 0.1 to 0.4 with increasing the H2O2 concentration in the case of low- and moderately-doped Si, but it did not change in the case of highly-doped Si. We discussed the observation results based on the spatial distribution of hole consumption and the band structures at Pt/Si and Si/electrolyte interfaces.

electrochemistry,materials science, coatings & films
Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

Fan Bai,Wai-Keung To,Zhifeng Huang

DOI: https://doi.org/10.1021/jp311999u

2013-01-01

Abstract:It is imperative to control the etching direction in metal-assisted chemical etching (MACE) to engineer the surface crystalline orientation of as-generated silicon nanowires (SiNWs). At room temperature, MACE of n-Si(111) carries out along the intrinsic back-bond etching direction of [111] under [HF]/[AgNO3] >= 50. When n-Si(111) is heavily doped, MACE generates mesoporous SiNWs (mp-SiNWs) standing on a mesoporous silicon (mpSi) layer. The porosification substantially weakens the back bonds underneath the sinking metal particles, leading to a deviation of etching from [111]. The selection of etching direction is governed by an angle of the selected direction to [111], and small angle is preferential. Due to the thermodynamic preference of the intrinsic back-bond etching, the etching along [111] is retained at >= 30 degrees C. Zigzag mp-SiNWs are first created under high [HF] and solution stirring, attributed to the HF-induced heating and stirring-stimulated H-2 evaporation. This work would potentially pave a way to employ mp-SiNWs with controllable surface orientations in catalysis, electronics, optoelectronics, sensors, and surface functionalization.
Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

Fatima Toor,Jeffrey B Miller,Lauren M Davidson,Logan Nichols,Wenqi Duan,Michael P Jura,Joanne Yim,Joanne Forziati,Marcie R Black

DOI: https://doi.org/10.1088/0957-4484/27/41/412003

IF: 3.5

2016-09-09

Nanotechnology

Abstract:There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or 'black silicon'. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional 'iso-texturing' (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63; Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8; Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting texture on the Si surface. Then we review efforts to increase the uniformity and reproducibility of the MACE process, which is critical for commercializing the black Si technology.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Proximal probe-like nano structuring in metal-assisted etching of silicon

Ersin Bahceci,Brian Enders,Zain Yamani,Serekbol Tokmoldin,Aman Taukenov,Laila Abuhassan,Munir Nayfeh

DOI: https://doi.org/10.1063/1.5096659

IF: 1.697

2019-05-01

AIP Advances

Abstract:We use silicon having multiple crystalline orientation domains and high metal doping in metal assisted chemical etching (MACEtch) in HF/H2O2. In device-quality silicon, MACEtch produces high-aspect ratio anisotropic (1-D) structures (wires, columns, pores or holes) and to a lesser degree non-high-aspect ratio luminescent (0-D) nano structures. While the 1-D structure symmetry is understood in terms of crystallography axis-dependent etching, predominantly along the <100> direction, the isotropic 0-D spherical symmetry etching is not understood. We observe in silicon having multiple crystalline orientation domains formation of metal tips (needles or whiskers) of diameters as small as 2-3 nm that bridge the metal to silicon and cause AFM/STM-like nanofabrication, producing 0-D mounds, indentations, or clusters. The formation of sharp needles can be understood in terms of charge injection/electric breakdown between metal clusters and silicon due to charge build-up. Silicon with high degree of impurities as well as with multiple crystalline orientation domains allow imaging these effects using electron spectroscopy without cross sectional cuts.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
The formation of SiNWs depending on the topology of the metal-catalyst film in the process of metal-assisted chemical etching of c-Si

A A Ermina,Yu A Zharova,V O Bolshakov,V A Tolmachev

DOI: https://doi.org/10.1088/1742-6596/1697/1/012110

2020-12-01

Journal of Physics: Conference Series

Abstract:Abstract The method of metal-assisted chemical etching for obtaining silicon nanowires, which consists of two stages, was studied. The conditions and modes for producing layers at both stages of the implemented technology are established, which include (1) chemical deposition of an array of self-organizing Ag nanoparticles on a Si substrate as a catalyst mask and (2) chemical etching of SiNWs to various depths from 110 to 1200 nm. The optical properties and morphology of a metal-catalyst (Ag) film were studied depending on the deposition time and solution concentration. Spectral ellipsometry was used to characterize the samples at all stages of MACE. Using the measured ellipsometric angles, the dielectric functions were determined, as well as the thicknesses and parameters of the fractions of composite layers in a multilayer model by approximating the effective Maxwell Garnett and Bruggeman medium for two-component layers. Samples with Ag nanoparticles with different morphologies were studied using reflection spectrophotometry in the wavelength range from 200 to 600 nm. The results showed that composite Ag-Si structures are promising for obtaining plasmon effects in both the visible and IR spectral regions.
Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

L Saraf,DR Baer,ZM Wang,J Young,MH Engelhard,S Thevuthasan

DOI: https://doi.org/10.1002/sia.2048

2005-01-01

Surface and Interface Analysis

Abstract:Many nanoporous Si structures, including those formed by common electrochemical etching procedures, produce a uniformly etched nanoporous surface. If the electrochemical etch rate is slowed down, details of the etch process can be explored and process parameters may be varied to test hypotheses and obtain controlled nanoporous and defect structures. For example, after electrochemical etching of heavily n-doped (R = 0.05-0.5 Omega.cm) silicon (100 single crystals at a current density of 10 mA cm(-2) in buffer oxide etch (BOE) electrolyte solution, defect craters containing textured nanopores were observed to occur in ring-shaped patterns. The defect craters apparently originate at the hydrogen/BOE bubble interface, which forms during hydrogen evolution in the reaction. The slower hydrogen evolution due to low current density and high BOE viscosity allows sufficient bubble residence time so that a high defect density appears at the bubble edges where local reaction rates are highest. Current-carrying Si-OH species are most likely responsible for the widening of the craters. Reducing the defect/doping density in silicon lowers the defect concentration and thereby the density of nanopores. Measurements of photoluminescence lifetime and intensity show a distinct feature when the few nanopores formed at the ring edges are isolated from each other. Overall features observed in the photoluminescence intensity by XPS strongly emphasize the role of surface oxide that influences these properties. Copyright (c) 2005 John Wiley & Sons, Ltd.
The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang,Minhua Jiang

DOI: https://doi.org/10.1007/s10853-007-1749-9

IF: 4.5

2007-01-01

Journal of Materials Science

Abstract:Porous silicon (PS) was obtained from n-type (100) mono-crystalline silicon wafers with different metal using two different illumination conditions. The visible photoluminescence (PL) may come from defect-related radiative centers on PS surface and adsorbed hydrogen atoms may be associated to the elimination of irradiative centers on PS surface, which can be proved by the infrared absorption spectra. The metal can be used as catalytic role to increase the etching rate under back illumination, but under front illumination, the metal can cancel light-generated carrier leading to the decrease of etching rate during anodic etching. Furthermore, the change of minority carrier lifetime is opposite to the change of PL efficiency of PS, which can be Confirmed by the results of μ-PCD measurements.
Factors affecting fabrication of silicon nanopillars using silica nanoparticle lithography and metal-assisted chemical etching

Nguyen Van Minh,Dang Van Hieu,Nghiem Thi Ha Lien,Chu Manh Hoang

DOI: https://doi.org/10.1117/1.jmm.21.1.011007

2022-01-24

Journal of Micro/Nanopatterning, Materials, and Metrology

Abstract:Different technologies have been explored for fabricating silicon nanopillars (SiNPs). One of the emerging technologies is the combined fabrication process based on silica nanoparticle lithography and metal-assisted chemical etching (MACE). However, the process flow to fabricate successfully SiNPs depends on various technology factors. We report investigations on factors affecting the fabrication technology, from the assembly of close-packed silica nanoparticle monolayers using drop-coating method, formation of nonclose packed silica nanoparticle monolayers using HF vapor etching, to creation of SiNPs using MACE. Etching mechanisms are suggested to explain observed experiment results.

English Else
Metal Ions' Dynamic Effect on Metal-Assisted Catalyzed Etching of Silicon in Acid Solution

Xiaoyu Yang,Ying Liu,Lin Wu,Zhiyuan Liao,Baoguo Zhang,Tinashe Tembo,Yichen Wang,Ya Hu

DOI: https://doi.org/10.3390/coatings14111405

IF: 3.236

2024-11-06

Coatings

Abstract:Metal-assisted catalyzed etching (MACE) technology is convenient and efficient for fabricating large-area silicon nanowires at room temperature. However, the mechanism requires further exploration, particularly the dynamic effect of various ions in the acid-etching solution. This paper investigated the MACE of silicon wafers predeposited with metal nanofilms in an HF-M(NO3)x-H2O etching solution (where M(NO3)x is the nitrate of the fourth-period elements of the periodic table). The oxidizing ability of Fe3+ and NO3− was demonstrated, and the dynamic influence of metal ions on the etching process was discussed. The results show that the MACE of silicon can be realized in various HF-M(NO3)x-H2O etching solutions, such as KNO3, Al(NO3)3, Cr(NO3)3, Mn(NO3)2, Ni(NO3)2, Co(NO3)2, HNO3, and Ca(NO3)2. It is confirmed that the concentration and type of cations in the etching solution affect the etching rate and morphology of silicon. Fe3+ and NO3− act as oxidants in catalytic etching. The fastest etching rate is about 5~6 μm/h in Ni(NO3)2, Co(NO3)2, and Ca(NO3)2 etching solutions. However, a high concentration of K+ hinders silicon etching. This study expands the application of MACE etching solution systems.

materials science, multidisciplinary,physics, applied, coatings & films
Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Julian A. Michaels,Lukas Janavicius,Xihang Wu,Clarence Chan,Hsieh‐Chih Huang,Shunya Namiki,Munho Kim,Dane Sievers,Xiuling Li

DOI: https://doi.org/10.1002/adfm.202103298

IF: 19

2021-06-10

Advanced Functional Materials

Abstract:Abstract Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for harsh environment power electronics, micro and nano electromechanical systems, and emerging quantum technology by serving as hosts for quantum states via defect centers. The chemical inertness of SiC limits viable etching techniques to plasma‐based reactive ion etching methods; however, these could have significant undesirable effects for electronic and photonic devices. This paper presents a plasma‐free, open‐circuit, photo‐induced metal‐assisted chemical etch for fabricating micro and nanoscale features without the inherent high energy ion‐related surface damage. The method presented herein utilizes above bandgap ultraviolet light, patterned noble metal (Pt), and a solution consisting of an oxidant potassium persulfate (K 2 S 2 O 8 ) and an acid, hydrofluoric acid, to spatially define the etching morphology. The parameter space is comprehensively explored to demonstrate the controllability and versatility of this technique to produce ordered arrays of micro and nanoscale SiC structures with porous or solid sidewalls, and to elucidate the etching mechanism.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Macroporous Silicon Templated from Silicon Nanocrystallite and Functionalized Si-H Reactive Group for Grafting Organic Monolayer.

Zhen-Dong Dai

DOI: https://doi.org/10.1016/j.jcis.2009.04.030

IF: 9.9

2009-01-01

Journal of Colloid and Interface Science

Abstract:This paper reports the development of a new fabrication process for highly porous and highly functional macroporous silicon (m-PSi). This new fabrication process involves two steps of electrochemical etching and one step of sonication detachment, and it uses silicon nanocrystallites as a template to form a honeycomb-like macroporous structure. The surface fabricated by this process has been characterized in comparison with the m-PSi surface fabricated by a one-step etching process. Scanning electron microscopy (SEM) images show that both m-PSi surfaces have nearly similar pore diameters (1-2 microm), but their porous microstructures are very different: the surface fabricated by two-step etching exhibits a smooth and shallow pore structure, while the other surface exhibits a rough and deep pore structure. Fourier transform infrared spectroscopy (FTIR) analyses reveal that the former is functionalized with a reactive Si-H group, while the latter is functionalized with a stable Si-O-Si group. To evaluate the Si-H reactive group, an allyl polyethylene glycol (PEG) is employed to modify the surface through hydrosilylation. SEM, FTIR, X-ray photoelectron spectroscopy, and water contact angle measurements are used to characterize the PEG-grafted m-PSi surface. PEG-grafted m-PSi substrates may have wide applications in biosensors, chemosensors, and biochips.
Heterogeneous Optoelectronic Characteristics of Si Micropillar Arrays Fabricated by Metal-Assisted Chemical Etching

Yang Qian,David J. Magginetti,Seokmin Jeon,Yohan Yoon,Tony L. Olsen,Maoji Wang,Jordan M. Gerton,Heayoung P. Yoon

DOI: https://doi.org/10.1038/s41598-020-73445-x

2020-06-30

Abstract:Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiOx shell on crystalline pillar cores introduced by local electrochemical reactions. In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiOx shell correlated to their chemical compositions. Local photoluminescent (PL) images obtained with an immersion oil objective lens in confocal microscopy show a red emission peak (about 650 nm) along the perimeter of the pillars that is threefold stronger compared to their center. On the basis of our analysis, we find an unexpected PL increase (about 540 nm) at the oil/shell interface. We suggest that both PL enhancements are mainly attributed to the porous structures, a similar behavior observed in previous MACE studies. Surface potential maps simultaneously recorded with topography reveal a significantly high surface potential on the sidewalls of MACE-synthesized pillars (+0.5 V), which is restored to the level of planar Si control (-0.5 V) after removing SiOx in hydrofluoric acid. These distinct optoelectronic characteristics of the Si/SiOx shell can be beneficial for various sensor architectures.

Applied Physics,Materials Science,Optics
Morphological and Optical Properties of Silicon Nanoholes Produced by Pt-nanoparticles Assisted Chemical Etching

Bao Zhu,Lian-Jie Li,Shi-Jin Ding,Wei Zhang

DOI: https://doi.org/10.1109/icsict.2012.6467850

2012-01-01

Abstract:Silicon nanoholes have been fabricated in heavily doped P-type single-crystalline silicon via Pt-nanoparticles assisted chemical etching. The morphologies of silicon nanoholes are modulated by varying etching time and HF concentration, respectively. Vertical aligned cylindrical nanoholes are observed in all fabricated films. As the etching time increase, the diameter of silicon nanoholes stays the same and the depth and roughness increase, though. The reflection spectrum indicates that these silicon nanoholes have great antireflection property and reflectivity as low as 2.5 % is obtained. When the HF concentration is raised, the depth of silicon nanoholes has a maximum and the diameter and roughness decrease. The reflection spectrum shows apparent interference fringes when the HF concentration is very high.
Formation Mechanism of Multi-Functional Black Silicon Based on Optimized Deep Reactive Ion Etching Technique with SF 6 /C 4 F 8

FuYun Zhu,XiaoSheng Zhang,HaiXia Zhang

DOI: https://doi.org/10.1007/s11431-014-5753-4

2015-01-01

Abstract:This paper reports a controllable multi-functional black silicon surface with nanocone-forest structures fabricated by an optimized deep reactive ion etching (DRIE) technique using SF6/C4F8 in cyclic etching-passivation process, which is maskless, effective and controllable. The process conditions are investigated by systematically comparative experiments and core parameters have been figured out, including etching process parameters, pre-treatment, patterned silicon etching and inclined surface etching. Based on the experimental data, the formation mechanism of nanocone shape is developed, which provides a novel view for in-depth understanding of abnormal phenomena observed in the experiments under different process situations. After the optimization of the process parameters, the black silicon surfaces exhibit superhydrophobicity with tunable reflectance. Additionally, the quantitative relationship between nanocones aspect ratio and surface reflectance and static contact angle is obtained, which demonstrates that black silicon surfaces with unique functional properties (i.e., cross-combination of reflectance and wettability) can be achieved by controlling the morphology of nanostructures.
Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning

Yun Chen,Yanhui Chen,Junyu Long,Dachuang Shi,Xin Chen,Maoxiang Hou,Jian Gao,Huilong Liu,Yunbo He,Bi Fan,Ching-Ping Wong,Ni Zhao

DOI: https://doi.org/10.1088/2631-7990/abff6a

2021-05-25

International Journal of Extreme Manufacturing

Abstract:Abstract Solid-state nanopores with controllable pore size and morphology have huge application potential. However, it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost. In this study, a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations. Through a SVM algorithm, the relationship between the nanopore structures and the fabrication conditions, including the etching solution, etching time, dopant type, and concentration, was modeled and experimentally verified. Based on this, a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained. The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores, nanostructures, and devices.

engineering, manufacturing,materials science, multidisciplinary
Gold-thickness-dependent Schottky Barrier Height for Charge Transfer in Metal-Assisted Chemical Etching of Silicon

Zewen Zuo,Guanglei Cui,Yi Shi,Yousong Liu,Guangbin Ji

DOI: https://doi.org/10.1186/1556-276x-8-193

2013-01-01

Nanoscale Research Letters

Abstract:Large-area, vertically aligned silicon nanowires with a uniform diameter along the height direction were fabricated by combining in situ-formed anodic aluminum oxide template and metal-assisted chemical etching. The etching rate of the Si catalyzed using a thick Au mesh is much faster than that catalyzed using a thin one, which is suggested to be induced by the charge transport process. The thick Au mesh in contact with the Si produces a low Au/Si Schottky barrier height, facilitating the injection of electronic holes from the Au to the Si, thus resulting in a high etching rate.
Macroporous silicon templated from silicon nanocrystallite and functionalized SiH reactive group for grafting organic monolayer

Dongjie Guo,Jing Wang,Wei Tan,Shou–Jun Xiao,Zhen-Dong Dai

DOI: https://doi.org/10.1016/j.jcis.2009.04.030

IF: 9.9

2009-01-01

Journal of Colloid and Interface Science

Abstract:This paper reports the development of a new fabrication process for highly porous and highly functional macroporous silicon (m-PSi). This new fabrication process involves two steps of electrochemical etching and one step of sonication detachment, and it uses silicon nanocrystallites as a template to form a honeycomb-like macroporous structure. The surface fabricated by this process has been characterized in comparison with the m-PSi surface fabricated by a one-step etching process. Scanning electron microscopy (SEM) images show that both m-PSi surfaces have nearly similar pore diameters (1-2 microm), but their porous microstructures are very different: the surface fabricated by two-step etching exhibits a smooth and shallow pore structure, while the other surface exhibits a rough and deep pore structure. Fourier transform infrared spectroscopy (FTIR) analyses reveal that the former is functionalized with a reactive Si-H group, while the latter is functionalized with a stable Si-O-Si group. To evaluate the Si-H reactive group, an allyl polyethylene glycol (PEG) is employed to modify the surface through hydrosilylation. SEM, FTIR, X-ray photoelectron spectroscopy, and water contact angle measurements are used to characterize the PEG-grafted m-PSi surface. PEG-grafted m-PSi substrates may have wide applications in biosensors, chemosensors, and biochips.

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate Via Pt Nanoparticles-Assisted Chemical Etching

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Thermoelectrical properties of silicon substrates with nanopores synthesized by metal-assisted chemical etching

Platinum-Particle-Assisted Etching of Low-, Moderately-, and Highly-Doped p-Type Silicon: Change of Composite Porous Structure

Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

Proximal probe-like nano structuring in metal-assisted etching of silicon

The formation of SiNWs depending on the topology of the metal-catalyst film in the process of metal-assisted chemical etching of c-Si

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Factors affecting fabrication of silicon nanopillars using silica nanoparticle lithography and metal-assisted chemical etching

Metal Ions' Dynamic Effect on Metal-Assisted Catalyzed Etching of Silicon in Acid Solution

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Macroporous Silicon Templated from Silicon Nanocrystallite and Functionalized Si-H Reactive Group for Grafting Organic Monolayer.

Heterogeneous Optoelectronic Characteristics of Si Micropillar Arrays Fabricated by Metal-Assisted Chemical Etching

Morphological and Optical Properties of Silicon Nanoholes Produced by Pt-nanoparticles Assisted Chemical Etching

Formation Mechanism of Multi-Functional Black Silicon Based on Optimized Deep Reactive Ion Etching Technique with SF 6 /C 4 F 8

Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning

Gold-thickness-dependent Schottky Barrier Height for Charge Transfer in Metal-Assisted Chemical Etching of Silicon

Macroporous silicon templated from silicon nanocrystallite and functionalized SiH reactive group for grafting organic monolayer