Abstract:There are a range of different methods to generate a nanostructured surface on silicon (Si) but the most cost effective and optically interesting is the metal assisted wet chemical etching (MACE) (Koynov et al 2006 Appl. Phys. Lett. 88 203107). MACE of Si is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features or 'black silicon'. MACE-fabricated nanowires (NWs) provide improved antireflection and light trapping functionality (Toor et al 2016 Nanoscale 8 15448-66) compared with the traditional 'iso-texturing' (Campbell and Green 1987 J. Appl. Phys. 62 243-9). The resulting lower reflection and improved light trapping can lead to higher short circuit currents in NW solar cells (Toor et al 2011 Appl. Phys. Lett. 99 103501). In addition, NW cells can have higher fill factors and voltages than traditionally processed cells, thus leading to increased solar cell efficiencies (Cabrera et al 2013 IEEE J. Photovolt. 3 102-7). MACE NW processing also has synergy with next generation Si solar cell designs, such as thin epitaxial-Si and passivated emitter rear contact (Toor et al 2016 Nanoscale 8 15448-66). While several companies have begun manufacturing black Si, and many more are researching these techniques, much of the work has not been published in traditional journals and is publicly available only through conference proceedings and patent publications, which makes learning the field challenging. There have been three specialized review articles published recently on certain aspects of MACE or black Si, but do not present a full review that would benefit the industry (Liu et al 2014 Energy Environ. Sci. 7 3223-63; Yusufoglu et al 2015 IEEE J. Photovolt. 5 320-8; Huang et al 2011 Adv. Mater. 23 285-308). In this feature article, we review the chemistry of MACE and explore how changing parameters in the wet etch process effects the resulting texture on the Si surface. Then we review efforts to increase the uniformity and reproducibility of the MACE process, which is critical for commercializing the black Si technology.

The formation of SiNWs depending on the topology of the metal-catalyst film in the process of metal-assisted chemical etching of c-Si

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching

Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

Hybrid Metal-Insulator-metal Structures on Si Nanowires Array for Surface Enhanced Raman Scattering

Structure and electrical behavior of silicon nanowires prepared by MACE process

Temperature Etching and Metallic Agent Concentration Effect on Structure, Morphology and Wettability of Silicon Nanowires

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

Controllable Light-Induced Conic Structures in Silicon Nanowire Arrays by Metal-Assisted Chemical Etching.

Silver catalysis in the fabrication of silicon nanowire arrays

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

Surface Texturing of Silicon Wafers by Two-step Ag-assisted Etching Process with New NSR Solution

Dewetting-Assisted Patterning: A Lithography-Free Route to Synthesize Black and Colored Silicon

OS1503 Development of Highly Ordered Silicon Nanowire Array

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Metal-assisted Photochemical Etching of GaN Nanowires: the Role of Metal Distribution

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

Metal Ions' Dynamic Effect on Metal-Assisted Catalyzed Etching of Silicon in Acid Solution

Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching

Gold-thickness-dependent Schottky Barrier Height for Charge Transfer in Metal-Assisted Chemical Etching of Silicon