Abstract:Programming nanoscale functional objects into complex, sophisticated heterostructures that tremendously outperform their solo objects and even bring about exotic chemical/physical properties offers exciting routes toward a spectrum of applications in photonics and electronics. The development in synthetic chemistry over past decades has enabled a library of hybrid nanostructures, such as core-shell, patchy, dimer, hierarchical/branched ones, etc. Nevertheless, the material combinations of these non-van der Waals solids are largely limited by the rule of lattice-matched epitaxy thereof. As an emerging class of heterostructures, axially segmented nanowires (ASNWs) offer an alternative but effective approach to epitaxially integrating the conventional non-van der Waals solids. The large lattice-mismatch tolerance in ASNWs permits vast material combinations, broad size modulations, and flexible interfacial strain engineering, signifying the great potentials for engineering their photon utilizations, band structures, features of charge carriers or excitons, and some other emerging properties. Unfortunately, ASNWs with on-demand, high-precision control over composition, shape, dimension, crystal phase, interface, and periodicity remain so far synthetically challenging. By steering the chemoselective reactions, one has access to high-precision ASNWs. In this Account, we describe the state-of-the-art synthetic strategies for chemoselectivity control. We categorize them into (i) unidirectional/bidirectional sequential additions, which include selective area epitaxy, catalyzed growth, and end-facet-seeded growth, and (ii) regiospecific one-off transformations, which include ionic exchange reaction, strain/thermal induced phase segregation and transition, Plateau-Rayleigh instability, regioselective heterogeneous nucleation as ruled by lattice match, defect, and surface charges, and nanomasking. We uncover the chemical principles behind from thermodynamic and kinetic aspects. Then we further offer insights into their fundamental physics (including carrier/photon/phonon confinement, mixed dimensionality, quantum dot-nanowire interaction, and interdot coupling effect) that are strongly correlated with a spectrum of applications, highlighting how the precise control of compositions and structures ultimately dictates their properties and functions. In the end, we conclude by describing current challenges and future directions of this field in terms of material synthesis, growth mechanism, exotic physics, and performance optimization. By crafting ASNWs at atomic precision, high-performance ASNWs with sophisticated electronic and phonon structures can be envisioned ultimately for applications in diverse fields, spanning from solar energy conversion and thermoelectrics to optoelectronics and quantum communications.

Controllable Light-Induced Conic Structures in Silicon Nanowire Arrays by Metal-Assisted Chemical Etching.

Manipulating Light with a Single Nanowire

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching

Structure and electrical behavior of silicon nanowires prepared by MACE process

OS1503 Development of Highly Ordered Silicon Nanowire Array

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

Hybrid Metal-Insulator-metal Structures on Si Nanowires Array for Surface Enhanced Raman Scattering

Morphology-Graded Silicon Nanowire Arrays via Chemical Etching: Engineering Optical Properties at the Nanoscale and Macroscale

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

The formation of SiNWs depending on the topology of the metal-catalyst film in the process of metal-assisted chemical etching of c-Si

Dewetting-Assisted Patterning: A Lithography-Free Route to Synthesize Black and Colored Silicon

Proximal probe-like nano structuring in metal-assisted etching of silicon

Engineering Island-Chain Silicon Nanowires Via a Droplet Mediated Plateau-Rayleigh Transformation

Axially Segmented Semiconductor Heteronanowires

Nanostructured silicon via metal assisted catalyzed etch (MACE): chemistry fundamentals and pattern engineering

Tuning the photoluminescence of porous silicon nanowires by morphology control

Metallic On-Chip Light Concentrators Fabricated by In Situ Plasmonic Etching Technique

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment

Composite Silicon Nanostructure Arrays Fabricated on Optical Fibre by Chemical Etching of Multicrystal Silicon Film.

Metal-particle-induced, Highly Localized Site-Specific Etching of Si and Formation of Single-Crystalline Si Nanowires in Aqueous Fluoride Solution.