Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Surface Microstructure of Porous Silicon Prepared by Electrochemical Etching

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Hierarchical Nanostructuring of Porous Silicon with Electrochemical and Regenerative Electroless Etching

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

Porous silicon formation and electropolishing

Influence of Cu-assisted chemical etching preparation condition on the morphology of porous silicon

Effect of Etching Time on Porous Silicon Formation

Electrochemical Formation of Self-positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate

Morphological and Optical Properties of Silicon Nanoholes Produced by Pt-nanoparticles Assisted Chemical Etching

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Effects of Electrochemical Etching Conditions on the Formation and Photoluminescence Properties of P-Type Porous Silicon

Formation of Cylindrical Nanoholes in Heavily Doped P-Type Si(100) Substrate Via Pt Nanoparticles-Assisted Chemical Etching

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Electrochemical Fabrication of Silicon-Based Micro-Nano-Hybrid Porous Arrays for Hybrid-Lattice Photonic Crystal

Progress and Mechanism of Cu Assisted Chemical Etching of Silicon in A Low Cu2+ Concentration Region

Formation and Mechanism of Silicon Nanostructures by Ni-assisted Etching

An Etching Method for Fabricating Anisotropic Silicon Nanostructures with Vertical and Smooth Sidewalls