Abstract:Electrochemical etching of silicon in hydrofluoride containing electrolytes leads to pore formation for low and to electropolishing for high applied current. The transition between pore formation and polishing is accompanied by a change of the valence of the electrochemical dissolution reaction. The local etching rate at the interface between the semiconductor and the electrolyte is determined by the local current density. We model the transport of reactants and reaction products and thus the current density in both, the semiconductor and the electrolyte. Basic features of the chemical reaction at the interface are summarized in law of mass action type boundary conditions for the transport equations at the interface. We investigate the linear stability of a planar and flat interface. Upon increasing the current density the stability flips either through a change of the valence of the dissolution reaction or by a nonlinear boundary conditions at the interface.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to explore the transition mechanism from the formation of porous silicon to electropolishing during the electrochemical etching process of silicon in hydrofluoric acid electrolyte. Specifically, the author focuses on the following aspects: 1. **Kinetics and transport mechanisms of electrochemical reactions**: The phenomena of porous silicon formation at low current densities and electropolishing at high current densities were studied. The author pointed out that in these two cases, the valence states of the electrochemical dissolution reactions are different, resulting in different interface morphology changes. 2. **Interface stability analysis**: Through linear stability analysis, the stability of the planar interface at different current densities was studied. The author proposed a simplified model to describe the mass transport and reaction kinetics during the electrochemical etching process, and used this model to explain the transition from the formation of porous silicon to electropolishing. 3. **Influence of nonlinear boundary conditions**: The influence of changes in reactant concentration and current density on the interface stability and morphology evolution at the electrochemical reaction interface was explored. The author paid special attention to the influence of mass - action - law - type boundary conditions on interface stability. 4. **Connection between theoretical models and experimental phenomena**: Although this transition phenomenon has been observed in many experiments, the underlying theoretical mechanism has not been fully understood. The author hopes to reveal the specific mechanism of this transition by establishing a continuum equation model and combining experimental data. ### Summary of the core problems in the paper - **Transition mechanism between porous silicon formation and electropolishing**: Why is porous silicon formed at low current densities, while electropolishing occurs at high current densities? - **Relationship between interface stability and current density**: How does interface stability change as the current density increases? What factors cause this change? - **Valence state changes in electrochemical reactions**: How do the valence states of the electrochemical dissolution reaction change during the formation of porous silicon and electropolishing? What is the impact of this change on interface stability? Through the study of these problems, the author hopes to provide a theoretical basis for understanding and predicting the behavior of silicon during the electrochemical etching process, thereby providing guidance for practical applications (such as the manufacturing of optoelectronic devices).

Porous silicon formation and electropolishing

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