Abstract:Because of their unique physical, and electric properties and chemical stability, the etching kinetics of III-V semiconductors is of, great significance in the fabrication of functional microdevices. However, the produced oxides result in a surface passivation and hinder the etching progress. Taking into account the passivation and depassivation of the insoluble oxides, we investigated the etching kinetics of III-V semiconductors (i.e., n-GaAs, nInP, and n-GaP) by scanning electrochemical microscopy (SECM) as well as the finite element method. By considering the coupling effect of the mass transport process and surface reactions, a dynamic deformed geometry module was adopted to determine both the etching rate and passivation rate individually and further correlate the kinetic-parameters to the topography of the etching pits. The results show that the etching process will be slowed or will even cease with increasing kinetic rate of surface passivation. On the basis of the component analysis of the passivation layer, ligands are suggested as additives to increase the solubility of the cations and to avoid the formation of metal oxides. By tuning the relative rates of the etching and passivation processes, the etching pit will be deepened with little increase of the diameter. SECM is proved powerful in the kinetic investigation of a complex etching system coupled with surface processes. This model allows the prediction of the etching resolution and removal rate with consideration of the passivation effect, which is valuable for, the electrochemical microfabrication on III-V semiconductor wafers.

Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system

Corrosion Mechanism and Surface Passivation Strategies of Polycrystalline Silicon Electrodes

The influence of oxidizing agents on etching and passivation of silicon in KOH solution

Chemical Etching and Anodic Oxidation of (100) Silicon in Alkaline Solution: the Role of Applied Potential

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Surface modification of chlorine-passivated silicon nanocrystals.

Galvanic Cell Formation: A Review of Approaches to Silicon Etching for Sensor Fabrication

Single-Electrode Electrochemistry: Chemically Engineering Surface Adhesion and Hardness to Maximize Redox Work Extracted from Tribocharged Silicon

Galvanic Cell Formation in Silicon/Metal Contacts: The Effect on Silicon Surface Morphology

Influence of formaldehyde on the electrochemistry and chemical etching of silicon in alkaline solutions

Electrochemistry Of Hypochlorite At Silicon In Alkaline Etchants - Applications In Device Fabrication

Etching Kinetics of III–V Semiconductors Coupled with Surface Passivation Investigated by Scanning Electrochemical Microscopy

Study on Mechanism of Al-enhanced Etching of Silicon by Reactive Ions in SF_6/O_2 Environment

I-V characterization study of porous silicon formation by doubled-cell electrochemical etching

Porous silicon formation and electropolishing

An Examination of the Chemical Staining of Silicon

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Surface Texturing of Silicon Wafers by Two-step Ag-assisted Etching Process with New NSR Solution

Optimization of the Surface Structure on Black Silicon for Surface Passivation

Progress and Mechanism of Cu Assisted Chemical Etching of Silicon in A Low Cu2+ Concentration Region

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio