Abstract:The quantification of fixed vs molecular dipole on semiconductor electrode (silicon) is achieved by determining redox‐couple‐dependent response of 'thermodynamic' EFB, functional VOC and the interfacial potential drops VHL and Vmol. Such determinations allow for the inherent photovoltage limitation(s) in a semiconductor‐based light‐to‐chemical‐energy device. We investigate the flat band voltage (VFB) of silicon (Si) surfaces functionalized with methyl (Me), 9‐anthracene (Anth), 1,8‐anthracene (DiAnth; two attachment points), and 9‐bianthracene (BiAnth) on n‐type and p‐type Si substrates. Flat band potential (EFB, by Mott‐Schottky) provided VFB (or VBI) dependent on the contacted redox couple (ERedox). On p‐type Si, VFB increased linearly until a limiting value was reached; similarly, the n‐type Si VFB decreased linearly until it plateaued at more negative potentials. Notably, the slope of VFB depended on the surface modifier, exhibiting opposite trends for p‐type and n‐type Si. Curiously, anthracene‐functionalized p‐Si exhibited an unexpectedly more shallow (and beneficial) slope than ‐methyl, attributed to the polarizability of the anthracene π electron cloud and a potential drop across the molecular interface. On n‐type Si, anthracene‐functionalized surfaces displayed a higher slope than ‐methyl, suggesting a gradual cancellation of the voltage shift effect due to a fixed surface dipole. We also quantified the interfacial potential drop across p‐Si–Anth as 275 mV using variable frequency (10 kHz vs 1 kHz) Mott‐Schottky analysis. The interfacial potential drop and dipoles that result from molecular functionalization are thus critical design parameters for PEC cells that utilize moderate‐potential redox couples or reactions; however, such effects are negligible with redox couples that reside at or beyond the semiconductor band‐edge.

Chemical Etching and Anodic Oxidation of (100) Silicon in Alkaline Solution: the Role of Applied Potential

Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system

The influence of oxidizing agents on etching and passivation of silicon in KOH solution

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Influence of formaldehyde on the electrochemistry and chemical etching of silicon in alkaline solutions

Electrochemistry Of Hypochlorite At Silicon In Alkaline Etchants - Applications In Device Fabrication

Selective Etching of Silicon in Aqueous KOH

Influence Of Anodization Current Density On Preparation And Corrosion Of N-Type Macroporous Silicon In 1.0 M Naoh

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

I-V characterization study of porous silicon formation by doubled-cell electrochemical etching

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode

Galvanic Cell Formation in Silicon/Metal Contacts: The Effect on Silicon Surface Morphology

Study of the Relationship Between Metal-Assisted Chemical Etching and Direction of the Applied Electric Field

Anisotropic Effects in Local Anodic Oxidation Nanolithography on Silicon Surfaces: Insights from ReaxFF Molecular Dynamics

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Role of Interfacial Potential Drops on Redox‐Couple Dependent Voltages Using Hybridized Si(111)–(Bis)Anthracene Photoelectrodes

Evaluation of Etch Behavior of Doped Silicon Wafer in Wet Cleaning Process

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio