Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm/s) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

Etching Silicon with Fluorine-Gas

The mechanical strength of polysilicon films: Part 1. The influence of fabrication governed surface conditions

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Metal-particle-induced, Highly Localized Site-Specific Etching of Si and Formation of Single-Crystalline Si Nanowires in Aqueous Fluoride Solution.

High Anodic-Voltage Focusing of Charge Carriers in Silicon Enables the Etching of Regularly-Arranged Submicrometer Pores at High Density and High Aspect-Ratio

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Fabrication of the microfluidic channels in silicon wafers using isotropic wet etching method: the impact of the composition of HNA solution on etching

Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO2 Films and HfO2/SiNx Stacks

Metal Ions' Dynamic Effect on Metal-Assisted Catalyzed Etching of Silicon in Acid Solution

Porosification-Induced Back-Bond Weakening in Chemical Etching of N-Si(111)

A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers

Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

Nano silver-catalyzed chemical etching of polycrystalline silicon wafer for solar cell application