Abstract:Nitrogen-doped Czochralski (NCZ) silicon has been a base material for integrated circuits. The interaction between nitrogen (N) and interstitial oxygen (Oi) atoms in the low temperature regime (300–650 °C), which leads to N–O complexes in the form of NOx (x = 1, 2, or 3), forms a series of shallow thermal donors (denoted as N–O STDs). Such N–O STDs are detrimental to the stability of electrical resistivity of NCZ silicon. In this work, we have experimentally investigated the elimination of N–O STDs in NCZ silicon by means of conventional furnace anneal (CFA) and rapid thermal anneal at elevated temperatures ranging from 900 to 1250 °C, aiming to explore the underlying mechanism. It is found that most of the N–O STDs formed in NCZ silicon can be eliminated by a very short period of anneal at the aforementioned temperatures, providing solid evidence for the viewpoint that the elimination of N–O STDs is ascribed to the decomposition of NOx complexes. Somewhat unexpectedly, the residual N–O STDs are much more after the 1250 °C/2 h CFA than after the 900 °C/2 h or 1000 °C/2 h counterpart, which is found to be due to the fact that more nitrogen pairs [(N2)s] are remaining after the 1250 °C/2 h CFA. It is proposed that most of the (N2) atoms are involved in the growth of grown-in oxide precipitates during the 900 or 1000 °C/2 h CFA. The first-principles calculations and molecular dynamics simulation indicate that the elimination of N–O STDs is essentially ascribed to the destruction of “NO ring” that is the core of NOx complexes. Furthermore, based on the experimental and theoretical results, we have made a thorough thermodynamic analysis to account for the details of elimination of N–O STDs as revealed in this work. It is believed that our experimental and theoretical studies have gained more insight into the N–O STDs in NCZ silicon.

A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

A High-Efficiency and Energy-Saving Method for Purifying Industrial Silicon for Silicone Use

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Internal Gettering of Copper Contamination in Czochralski Silicon

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

A Metal-Free Additive Texturization Method Used for Diamond-Wire-sawn Multi-Crystalline Silicon Wafers

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Scanning Infrared Microscopy Study of Thermal Processing Induced Defects in Low Resistivity Si Wafers

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Delineation of Flow Pattern Defects in Heavily Boron-doped Czochralski Silicon Wafer

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

N-Type Area of PN Junction Etched in BOE Solution

Constructing Submicron Textures on Mc-Si Solar Cells Via Copper-Catalyzed Chemical Etching

Rapid-Thermal-Processing-Based Intrinsic Gettering For Nitrogen-Doped Czochralski Silicon

Research on Pt Nanoparticles-Assisted Chemical Etching of Heavily Doped p-Type Monocrystalline Silicon

Defect Engineering In Silicon Used For Ultra Large-Scale Integrated Circuits