Abstract:Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner.

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An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Internal Gettering of Copper Contamination in Czochralski Silicon

A chromium-free etchant for delineation of defects in heavily doped n-type silicon wafers

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Discrimination of Dislocation in Highly Doped N-Type 4H-Sic by Combining Electrochemical Reaction and Molten Alkali Etching

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Defect Engineering In Silicon Used For Ultra Large-Scale Integrated Circuits

Structural and Luminescent Properties of Electron-Irradiated Silicon

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Comprehensive Characterization of Efficiency Limiting Defects in the Swirl-Shaped Region of Czochralski Silicon