Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Comprehensive Characterization of Efficiency Limiting Defects in the Swirl-Shaped Region of Czochralski Silicon

Separated striations in n-type Czochralski silicon solar cells

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

(Invited) Defects in Cast-Mono Crystalline Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon

Germanium in Czochralski Silicon

Flow Pattern Defects in Germanium-Doped Czochralski Silicon Crystals

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Effect of oxygen-related defects on the performance of seed-end wafers in Ga-doped recharged Czochralski silicon: Thermal donors

Recombination Activity of Sub-Grain Boundaries and Dislocation Arrays in Quasi-Single Crystalline Silicon

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Grown-In Defects in Nitrogen-Doped Czochralski Silicon

Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Dangling bond defects on Si surfaces and their consequences on energy band diagrams: from a photoelectrochemical perspective