Abstract:Defect size distributions in nitrogen-doped Czochralski (N-CZ) silicon wafers were obtained using an oxygen precipitate profiler and Wright-Jenkins etching. These showed unique depth dependence in low-high and high-low-high cycled N-CZ wafers. Unique phenomena observed include a high defect concentration at the subsurface that decreases within the top 2μm of the so-called denuded zone. In contrast to N-free CZ Si for which the first high step annealing dissolves the grown-in defects, these appeared to be stable in N-CZ Si. As a result, the defect size distribution in the bulk was found to be independent of the annealing cycle. It was also found that the depth dependent defect concentration correlates well with oxygen and strongly with nitrogen secondary ion mass spectroscopy profiles, suggesting that nitrogen is the leading impurity in the defect formation processes even though introduced at very low concentration. Nitrogen appeared to effectively modify the nucleation regime by a drastic increase of the nuclei density. At low temperature under external stress, nitrogen and oxygen cosegregate to the surface where the stress is applied; such a phenomenon is largely increased at high temperature.

Electrical Properties of Oxygen Precipitate-Related Defects in Czochralski Silicon

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

The Advance of Research on Oxygen Precipitates in NCZ Silicon

Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

Influences of Oxygen Precipitation on Vickers Hardness of Czochralski Silicon

Grown-In Oxygen Precipitates in Czochralski Silicon Investigated by Transmission Electron Microscopy

Effect of Tin on Point Defects and Oxygen Precipitation in Czochralski Silicon: Experimental and Theoretical Studies

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Defect-Related Electroluminescence from Metal-Oxide-Semiconductor Devices with Zro2 Films on Silicon

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

The Annealing Behavior of Oxygen in Cast Multicrystalline Silicon