Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Effect of Tin on Point Defects and Oxygen Precipitation in Czochralski Silicon: Experimental and Theoretical Studies

Density Functional Theory Study Of The Impact Of Tin Doping On Oxygen Diffusion In Czochralski Silicon

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Effect of oxygen precipitates on dislocation motion in Czochralski silicon

Effect of Vacancies on Oxygen Precipitation in Germanium-Doped Czochralski Silicon

Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralski silicon

Oxygen Precipitation in Heavily Phosphorus-Doped Czochralski Silicon: Effect of Nitrogen Codoping

Kinetic suppression of boron–oxygen complexes in p-type Czochralski silicon by tin doping

Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Immobilization of Dislocations by Oxygen Precipitates in Czochralski Silicon: Feasibility of Precipitation Strengthening Mechanism

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

The Effect of the Ramping Rate on Oxygen Precipitation and the Denuded Zone in Heavily Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Impact of Sn-doping on the optoelectronic properties of zinc oxide crystal: DFT approach

The Advance of Research on Oxygen Precipitates in NCZ Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Effect of Carbon Doping on Oxygen Precipitation Behavior in Internal Gettering Processing for Czochralski Silicon