Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Kinetic suppression of boron–oxygen complexes in p-type Czochralski silicon by tin doping

Effect of Tin on Point Defects and Oxygen Precipitation in Czochralski Silicon: Experimental and Theoretical Studies

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Light-Induced Degradation in N-Type Czochralski Silicon by Boron-Doping and Thermal Donor Compensation

Density Functional Theory Study Of The Impact Of Tin Doping On Oxygen Diffusion In Czochralski Silicon

Impact of boron and indium doping on the structural, electronic and optical properties of SnO2

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Confronting the Air Instability of Cesium Tin Halide Perovskites by Metal Ion Incorporation

Coupled Boron-Doping and Geometry Control of Tin-Catalyzed Silicon Nanowires for High Performance Radial Junction Photovoltaics.

Impact of Carbon Co-Doping on the Performance of Crystalline Silicon Solar Cells

Impact of tin doping on charge carrier dynamics of a two-dimensional lead halide perovskite

Thermodynamic, electronic, and optical properties of ultra-wide bandgap zirconium-doped tin dioxide from a DFT perspective

Dislocation-induced variation of generation kinetics of boron-oxygen complexes in silicon

Suppression of Boron-Oxygen Defects in Czochralski Silicon by Carbon Co-Doping

Suppression of Boron–oxygen Defects in P-Type Czochralski Silicon by Germanium Doping

Inhibition of Phase Segregation in Cesium Lead Mixed-Halide Perovskites by B-Site Doping

Novel Molecular Doping Mechanism for N‐doping of SnO2 Via Triphenylphosphine Oxide and Its Effect on Perovskite Solar Cells

Optical Properties and Boron Doping-Induced Conduction-Type Change in SnO 2 Thin Films

New Insights on LeTID/BO-LID in P-Type Mono-Crystalline Silicon

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

Understanding the Role of Lithium Doping in Reducing Nonradiative Loss in Lead Halide Perovskites