Abstract:<p>Cast mono Silicon (Si) technology has the advantages of low cost, i.e., multicrystalline silicon (mc-Si), and high efficiency, i.e., Czoch-ralski-grown silicon (Cz-Si). Cast mono Si has a similar performance to current Cz-Si counterparts with a solar cell structure, i.e., a passivated emitter and rear cell (PERC). However, the severity of light and elevated temperature-induced degradation (LeTID) on cast mono Si solar cells may be similar to mc-Si, not Cz-Si. To clarify the LeTID kinetics in the p-type cast mono silicon, we observed the effect that LeTID had on the carrier lifetime. First, a series of carrier lifetime measurements were performed to investigate LeTID kinetics in the accelerated regeneration process via high intensity illumination at elevated temperatures and modulating kinetics via dark annealing before illumination. Next, we documented the evolution of a carrier lifetime to investigate the stability of regenerated state at 75 °C and light intensity of ~ 1 kW/m<sup>2</sup>. The results show that the effect of dark annealing on LeTID kinetic modulation could be explained by the B-H defect precursor concentration and defect reservoir theory, which originate from the results for mc-Si. An accelerated regeneration method that combines dark annealing and illumination, with high intensity at an elevated temperature, can yield a higher value and improved LeTID stability in terms of the lifetime, as compared with illumination without pre-annealing. This implies that this mixed process may be a potential method to provide both improved performance and high anti-LeTID properties in Si PERC solar cells.</p>

New Insights on LeTID/BO-LID in P-Type Mono-Crystalline Silicon

Study on the Relationship between BO–LID and LeTID in Czochralski-Grown Monocrystalline Silicon

Light-Induced Degradation in N-Type Czochralski Silicon by Boron-Doping and Thermal Donor Compensation

Investigation on the Light and Elevated Temperature Induced Degradation of Gallium-Doped Cz-Si

Kinetics of light and elevated temperature-induced degradation in cast mono p-type silicon

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Study on Permanent Deactivation of the Light-Induced Degradation in P-Type Compensated Crystalline Silicon Solar Cells

Role of Metal Impurities in Multicrystalline Silicon Solar Cell Degradation

The Effect and Mechanism of Current Injection to Suppress Light and Elevated Temperature Induced Degradation in P-Type Cast-Mono and Multicrystalline Silicon Passivated Emitter and Rear Cells

Dislocation-induced variation of generation kinetics of boron-oxygen complexes in silicon

Passivation with sputtered silicon nitride and modified heat treatment for lifetime improvement

Kinetics Study on Carrier Injection‐Induced Degradation and Regeneration at Elevated Temperature in P‐type Cast‐Monosilicon Passivated Emitter Rear Contact Solar Cells

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Kinetic suppression of boron–oxygen complexes in p-type Czochralski silicon by tin doping

Impact of Hydrogen in Ga‐doped Silicon on Maximum LeTID Defect Density