Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Temperature and Total Ionizing Dose Effects of SiC MOSFET and Their Synergistic Characteristics

Total ionizing dose effects of Co-60-& gamma; ray radiation on SiC MOSFETs with different gate oxide thickness

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Impact of Total Ionizing Dose Effects on the Threshold Voltage Hysteresis of SiC MOSFETs

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

Impact of Heavy-Ion Irradiation on Gate Oxide Reliability of Silicon Carbide Power MOSFET

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Impact of Switching Frequencies on the TID Response of SiC Power MOSFETs

Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing

Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs