Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices Between Planar and Trench Structures

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Analysis of Displacement Damage Induced by Silicon-Ion Irradiation in SiC MOSFETs

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET

Impact of Switching Frequencies on the TID Response of SiC Power MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Heavy-ion effects in SiC power MOSFETs with trench-gate design

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Temperature and Total Ionizing Dose Effects of SiC MOSFET and Their Synergistic Characteristics

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET