Abstract:In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10 4 ion/cm 2 , and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10 4 ion/cm 2 , so when the LET value is 37.3 MeV·cm 2 /mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N – drift layer and the N + substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

Heavy-ion effects in SiC power MOSFETs with trench-gate design

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Study on the Single-Event Burnout Effect Mechanism of SiC MOSFETs Induced by Heavy Ions

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Comparison of Gamma Irradiation Effects on Short Circuit Characteristics of SiC MOSFET Power Devices Between Planar and Trench Structures

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs

Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

Single-Event Effects in Heavy-Ion Irradiated 3kV SiC Charge-Balanced Power Devices

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V