Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

Short-Circuit Characterization and Protection of 10-kV SiC mosfet