Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Degradation of 4H-Sic MOSFET Body Diode under Repetitive Surge Current Stress

Experimental Investigation of the Single Pulse Surge Current Ruggedness of the Body Diode of SiC Power MOSFETs

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures

Methodology for Enhanced Surge Robustness of 1.2-kV SiC MOSFET Body Diode

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Investigation on Surge Current Capability of 4H-Sic Trench-Gate MOSFETs in Third Quadrant under Various VGS Biases

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Evaluation of Bipolar Degradation in SiC MOSFETs for Converter Design

Review and analysis of SiC MOSFETs’ ruggedness and reliability