Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Evaluation of Bipolar Degradation in SiC MOSFETs for Converter Design

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Degradation of 4H-Sic MOSFET Body Diode under Repetitive Surge Current Stress

Design and Fabrication of 1.2kv SBD Integrated 4hsic MOSFET for Reliable Reverse Conduction

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Investigation On Degradation Mechanism And Optimization For Sic Power Mosfets Under Long-Term Short-Circuit Stress

Degradation Of 4h-Sic Mosfets Under Different Short Circuit Test Conditions: A Simulation Study

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures