Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has superior performances in terms of high switching frequency and low power loss, but its widespread applications in markets have been partly hindered by its ruggedness and reliability. Overcurrent operation is a common phenomenon which causes overheat of power devices and further leads to degradation or even device failures in power electronic systems. However, in- depth degradation mechanism and limiting factors of repetitive overcurrent capability have not been comprehensively studied yet. In this article, we investigated the conduction and the switching overcurrent stress separately to figure out the roles of each operation processes in the degradation of 1.2-kV SiC planar-gate MOSFETs for the first time. It is observed that the conduction overcurrent stress causes a positive shift of threshold voltage, while the switching overcurrent stress leads to a negative shift of threshold voltage as well as larger gate leakage current. Electrons captured at the SiC/SiO2 interface may be the reason for the positive shift of threshold voltage, while the negative shift of threshold voltage may be due to the injection and accumulation of the holes into the gate oxide at JFET and near-channel region. Both experimental results and simulation analysis show that the switching overcurrent stress plays a major role in the degradation of 1.2-kV SiC planar-gate MOSFETs under repetitive overcurrent stress. In addition, the influence of major limiting factors, including overcurrent level, overcurrent duration, and drain–source voltage, is also investigated to evaluate the reliability of SiC planar-gate MOSFETs under different overcurrent conditions, which will provide a useful guidance for dedicated design and utilization of SiC MOSFETs.

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Investigation On Degradation Mechanism And Optimization For Sic Power Mosfets Under Long-Term Short-Circuit Stress

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Degradation Investigations on Asymmetric Trench SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stress

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Investigations on degradation and optimization of 1.2kV 4H-SiC MOSFET under repetitive unclamped inductive switching stress

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Suppression Effect of Split-Gate Structure on Repetitive Avalanche Stress Induced Degradation for SiC MOSFETs

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Degradation Mechanism and Failure Analysis of Planar Type SiC MOSFETs Under Cyclic Stress of Surge Current

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

A Deep Insight into the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Unclamped Inductive Switching Stresses

Time-Dependent Degradation Mechanism of 1.2 Kv SiC MOSFET under Long-Term High-Temperature Gate Bias Stress

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures