Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has superior performances in terms of high switching frequency and low power loss, but its widespread applications in markets have been partly hindered by its ruggedness and reliability. Overcurrent operation is a common phenomenon which causes overheat of power devices and further leads to degradation or even device failures in power electronic systems. However, in- depth degradation mechanism and limiting factors of repetitive overcurrent capability have not been comprehensively studied yet. In this article, we investigated the conduction and the switching overcurrent stress separately to figure out the roles of each operation processes in the degradation of 1.2-kV SiC planar-gate MOSFETs for the first time. It is observed that the conduction overcurrent stress causes a positive shift of threshold voltage, while the switching overcurrent stress leads to a negative shift of threshold voltage as well as larger gate leakage current. Electrons captured at the SiC/SiO2 interface may be the reason for the positive shift of threshold voltage, while the negative shift of threshold voltage may be due to the injection and accumulation of the holes into the gate oxide at JFET and near-channel region. Both experimental results and simulation analysis show that the switching overcurrent stress plays a major role in the degradation of 1.2-kV SiC planar-gate MOSFETs under repetitive overcurrent stress. In addition, the influence of major limiting factors, including overcurrent level, overcurrent duration, and drain–source voltage, is also investigated to evaluate the reliability of SiC planar-gate MOSFETs under different overcurrent conditions, which will provide a useful guidance for dedicated design and utilization of SiC MOSFETs.

A Decrease in TDDB Lifetime of Commercial SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stresses

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

A Deep Insight into the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Unclamped Inductive Switching Stresses

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Gate Oxide Reliability in Silicon Carbide Planar and Trench Metal-Oxide-Semiconductor Field-Effect Transistors Under Positive and Negative Electric Field Stress