Abstract:A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forward conduction performance and surge current capability were studied. Device forward characteristics were simulated and measured. Standard single-pulse surge current tests and thermal impedance measurements were carried to show their surge capability and thermal design differences. An advanced thermal RC (thermal resistance-capacitance) model, with the consideration of current distribution non-uniformity effects, is proposed to accurately calculate the device junction temperature during surge events. It was found that a thinner substrate and a hexagonal layout design are beneficial to the improvement of the bipolar conduction performance in high current mode, as well as the surge current capability. The thinner substrate design also has advantages on thermal aspects, as it presents the lowest thermal resistance. The calculated failure temperature during the surge tests is consistent with the aluminum melting phenomenon, which is regarded as the failure mechanism. It was demonstrated that, for a SiC MPS diode, higher bipolar conduction performance is conducive to restraining the joule heat, and a lower thermal resistance design is able to accelerate the heat dissipation and limit the junction temperature during surge events. In this way, the MPS diode using a thinner substrate and advanced layout design technology is able to achieve 60% higher surge current density capability compared to the other technologies.

Experimental Investigation of the Single Pulse Surge Current Ruggedness of the Body Diode of SiC Power MOSFETs

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Methodology for Enhanced Surge Robustness of 1.2-kV SiC MOSFET Body Diode

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

Degradation of 4H-Sic MOSFET Body Diode under Repetitive Surge Current Stress

An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Investigation on Surge Current Capability of 4H-Sic Trench-Gate MOSFETs in Third Quadrant under Various VGS Biases

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs