Abstract:In this study, single crystal (sc) and nanocrystalline (nc) 3C-SiC samples were subjected to 30 keV He ion irradiation across various doses while maintaining a temperature of 800°C. Employing techniques including Raman spectroscopy, transmission electron microscopy (TEM), and nanoindentation, the alterations in microstructure and hardness resulting from He irradiation with various fluences were examined.In sc-SiC, irradiation prompted the formation of He platelets, resulting in a hardness increase of 7 GPa. In contrast, nc-SiC, characterized by a higher stacking fault density, exhibited the formation of bubbles, primarily at grain boundaries (GBs), with fewer occurrences within the grain interior, leading to a hardness increase of 1 GPa. Notably, in both sc- and nc-SiC, hardness reached saturation and subsequently stabilized or declined with increasing He fluence.Through molecular dynamics (MD) cascade simulations, we discerned that various planar defects do not uniformly contribute to enhancing radiation resistance. For example, intrinsic stacking faults (ISF) and twins in SiC played a substantial role in altering defect density and configurations, thereby facilitating point defect annihilation. Conversely, extrinsic stacking faults (ESF) and Σ3 GBs had a limited impact on defect production during a cascade.Furthermore, calculations of cluster diffusivity revealed an accelerated movement of He-vacancy towards GBs compared to bulk material and other planar defects. Moreover, the scarcity of point defects and constrained mobility of He atoms towards stacking faults in nc-SiC elucidated the marked tendency of He to form platelets in sc-SiC.Additionally, our findings established a correlation between the calculated indentation hardness and the geometry of He defects, consistent with experimental results from nanoindentation. These results significantly contribute to ongoing efforts to design SiC materials with heightened radiation tolerance.

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Defect Characterization of 6H-Sic Studied by Slow Positron Beam

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination

Electrical Characterization and Temperature Reliability of 4H-Sic Schottky Barrier Diodes after Electron Radiation

Effects of Gamma-Ray Irradiation on Material and Electrical Properties of AlN Gate Dielectric on 4H-Sic

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Exploring Defect Behavior in Helium-Irradiated Single-Crystal and Nanocrystalline 3C-Sic at 800°C: A Synergy of Experimental and Simulation Techniques

Vacancy in 6H-Silicon Carbide Studied by Slow Positron Beam

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-Sic

Evolution Of Defects And Defect Clusters In Beta-Sic Irradiated At High Temperature

Photoluminescence of Electron-and Neutron-Irradiated n-Type 6H-SiC