Abstract:SiC materials and devices are highly regarded in the power semiconductor industry for their exceptional electrical, thermal, and chemical properties. They meet the demanding requirements of high temperature, voltage, frequency, power, and radiation resistance applications. With the increasing demand for new energy vehicles, 5G communications, rail transit, and ultra-high voltage transmission, SiC power devices are rapidly expanding. However, the quality of SiC wafers still needs improvement compared to well-established Si-based semiconductor technology. The maturity of SiC wafer manufacturing directly impacts device performance. This comprehensive review focuses on the thorough characterization and analysis of SiC wafers. It includes quantitative and qualitative assessments of material composition, trace elements, microscopic and lattice structures, binding energy, chemical bonds, and electrical properties. SiC wafers and epitaxial layers have defect densities several orders of magnitude higher than Si wafers, significantly affecting the electrical performance and reliability of semiconductor devices. The study analyzes surface defects in SiC wafers and calculates yield using a Poisson Model based on defect density, providing insights for SiC manufacturing cost analysis. Additionally, the review conducts a series of systematic failure investigations on a SiC power trench MOSFET through failure mode analysis. Thermally-induced voltage variation technology identifies the failure location. Electrical performance simulation analysis utilizes physical parameters extracted from a matured SiC MOSFET product chip. This report offers a comprehensive overview of SiC material and device characterization, analysis, and failure investigation for power electronics engineering. The findings enhance the understanding of SiC technology and its potential for further advancements in the power semiconductor industry.

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Defect Appearance on 4H-Sic Homoepitaxial Layers Via Molten KOH Etching

The Defects Regulating for the Electronic Structure and Optical Properties of 4H-Sic with (0001) Surface

Defect Reduction in SiC Growth Using Physical Vapor Transport

Advances and challenges in 4H silicon carbide: defects and impurities

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Impurities and defects in 4H silicon carbide

Surface Defects and Accompanying Imperfections in 4h–sic: Optical, Structural and Electrical Characterization

Active defects in MOS devices on 4H-SiC: A critical review.

The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface

Improvement of Fast Homoepitaxial Growth and Defect Reduction Techniques of Thick 4H-Sic Epilayers

First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Characterizations on the Doping of Single-Crystal Silicon Carbide

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

H+ Implantation Induced Defects Distribution in 4H-Sic Single Crystal Film Fabricated by Crystal-Ion-Slicing and Its Effects on Electrical Behavior: A Multiple Characterization Study

Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide