Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Review of SiC crystal growth technology

Review of solution growth techniques for 4H-SiC single crystal

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Silicon Carbide: Progress in Crystal Growth

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Characterizations on the Doping of Single-Crystal Silicon Carbide

High quality and wafer-scale cubic silicon carbide single crystals

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Physical properties, bulk growth, and applications of SiC single crystal

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

Emerging SiC Applications beyond Power Electronic Devices

Research progress of large size SiC single crystal materials and devices

Current status and perspectives of ultrahigh-voltage SiC power devices

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Advances in SiC materials and devices: an industrial point of view