Abstract:Growth and processing of SiC single crystals was introdeced in order to enlarge the crystal size and obtain quality SiC wafers. Considerable progresses have been made in these aspects, resulting in the first spring-off in China that is devoted to mass production quality 4H-SiC and 6H-SiC wafers. Up to 2011, for most SiC wafers, the micropipe density is lower than 1 cm-2 and the average full width at half maxima of X-ray rocking curves for the (0004) reflection is lower than 20″. N-type and semi-insulating SiC single crystals with homogeneous resistivity lower than 0.02 Ω·cm and up to 108 Ω·cm have been stably grown, respectively. The epi-ready processing was developed and applied to wafers inducing quite low roughness, bow and warp and obtaining quality epitaxial layer. In the meantime, a series progresses have been achieved in the investigation of basic properties of SiC and the fabrication of epitaxial graphene on SiC substrates. Both experimentally and theoretically showed that the intentionally created defects dominated by divacancies are responsible for the magnetism, the first evidence of its kind in SiC single crystals irradiated by neutron. Large area of quality graphene has been fabricated by pulsed electron irradiation and physical vapour transport methods.

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

The growth methods and applications of wide band-gap semiconductor SiC

Recent Development of Wide Bandgap Semiconductor SiC Substrates and Device

Progress In Research On Luminescence Properties And Modification Of Sic

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Research Progress of the Luminescent Properties of SiC Material

Recent Development and Future Perspective of Silicon Carbide Power Devices——Opportunity and Challenge

Research on the growth and application of silicon carbide in China

Fundamental research on semiconductor SiC and its applications to power electronics

Growth and properties of wide bandgap semiconductor silicon carbide single crystal

Application and Development of SiC Materials and Devices

Research progress of large size SiC single crystal materials and devices

Physical properties, bulk growth, and applications of SiC single crystal

Recent progress of SiC power devices and applications

Recent Progress in SiC Monocrystal Growth and Wafer Machining

Advancing in Research of One-dimensional Silicon Nano-materials

Researches and Applications of Wide Bandgap SiC Power Devices in Electric Vehicles

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Research Progress in SiN for Multicrystalline Silicon Solar Cells

Development of High-Voltage SiC Power Electronic Devices