Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Review of solution growth techniques for 4H-SiC single crystal

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Review of SiC crystal growth technology

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

High quality and wafer-scale cubic silicon carbide single crystals

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

Silicon Carbide: Progress in Crystal Growth

Growth and doping of silicon carbide with germanium: a review

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Development of High Quality 8 Inch 4H-SiC Substrates