Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Surface Control of AlN Single Crystal Growth on SiC Substrate

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Review of solution growth techniques for 4H-SiC single crystal

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Diameter enlargement of SiC bulk single crystals based on simulation and experiment

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Growth of 3C-Sic on Si(100) by LPCVD Using a Modified Process after the Clean Step

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

High quality and wafer-scale cubic silicon carbide single crystals

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method

Pvt Growth of 6h Sic Crystals and Defect Characterization

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method