Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Diameter enlargement of SiC bulk single crystals based on simulation and experiment

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Novel Method for High Speed SiC Vapor Growth

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

A review of the simulation studies on the bulk growth of silicon carbide single crystals

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes

Development of High Quality 8 Inch 4H-SiC Substrates

Effect of Silicon Nitride Coated Carbon Crucible on Multi-Crystalline Silicon Ingot during Directional Solidification Process: Numerical Simulation