Abstract:Silicon carbide (SiC) emerges as a promising ceramic material for high-temperature structural applications, especially within the aerospace sector. The utilization of SiC-based ceramic matrix composites (CMCs) instead of superalloys in components like engine shrouds, combustors, and nozzles offers notable advantages, including a 25% improvement in fuel efficiency, over 10% enhanced thrust, and the capability to withstand up to 500$^{\circ}$C higher operating temperatures. Employing a CALPHAD-reinforced multi-phase-field model, our study delves into the evolution of the SiC layer under isothermal solidification conditions. By modeling the growth of SiC between liquid Si and solid C at 1450$^{\circ}$C, we compared results with experimental microstructures and quantitatively examined the evolution of SiC thickness over time. Efficient sampling across the entire model space mitigated uncertainty in high-temperature kinetic parameters, allowing us to predict a range of growth rates and morphologies for the SiC layer. The model accounts for parameter uncertainty stemming from limited experimental knowledge and successfully predicts relevant morphologies for the system. Experimental results validated the kinetic parameters of the simulations, offering valuable insights and potential constraints on the reaction kinetics. We further explored the significance of multi-phase-field model parameters on two key outputs, and found that the diffusion coefficient of liquid Si emerges as the most crucial parameter significantly impacting the SiC average layer thickness and grain count over time. This study provides valuable insights into the microstructure evolution of the Si-C binary system, offering pertinent information for the engineering of CMCs in industrial applications.

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes

SiC Crystal Growth from Transition Metal Silicide Fluxes

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Study of Effect of Coil Movement on Growth Conditions of SiC Crystal

Diameter enlargement of SiC bulk single crystals based on simulation and experiment

Growth Mechanisms for SiC-AlN Solid Solution Crystals Prepared by Combustion Synthesis

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Crystal Growth In The Combustion Synthesis Of -Si3n4 Using Si With Different Particle Sizes

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

Pvt Growth of 6h Sic Crystals and Defect Characterization

VLS growth of SiC whisker from FeSi flux

Manipulation Of Phase And Microstructure At Nanoscale For Sic In Molten Salt Synthesis

Controlled growth of SiC crystals in combustion synthesis

The Growth of Si on Sic Complex Substrate by Cvd

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Synthesis, characterization and growth mechanism of SiC fibers