Abstract:Cubic silicon carbide (3C‐SiC) crystals are grown by the close space physical vapor transport (CS‐PVT) method while the growth temperature, pressure, and the nitrogen doping are varied during three different growth run series. The influence of the growth parameters on the step‐controlled surface morphology and stacking fault density is systematically investigated and discussed. A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

Pvt Growth of 6h Sic Crystals and Defect Characterization

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

The Fracture Stress of 8-Inch Silicon Carbide During the PVT Growth

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method

The Growth of Sic Crystals from Cosi Molten Alloy Fluxes

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

In-situ and ex-situ Characterizations of PVT-grown 4H-SiC Single Crystals

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method