Abstract:Cubic silicon carbide (3C‐SiC) crystals are grown by the close space physical vapor transport (CS‐PVT) method while the growth temperature, pressure, and the nitrogen doping are varied during three different growth run series. The influence of the growth parameters on the step‐controlled surface morphology and stacking fault density is systematically investigated and discussed. A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Study of Effects of Varying Parameters on the Dislocation Density in 200 Mm Sic Bulk Growth

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Surface Control of AlN Single Crystal Growth on SiC Substrate

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals