Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Three-Dimensional Epitaxy of Low-Defect 3C-SiC on a Geometrically Modified Silicon Substrate

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Epitaxial Growth of Cubic Silicon Carbide on Silicon by Sublimation Method

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Single Domain 3C-Sic Growth on Off-Oriented 4H-Sic Substrates

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

High quality and wafer-scale cubic silicon carbide single crystals

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

1 Single domain 3 CSiC growth on off-oriented 4 H-SiC substrates

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Heteroepitaxial Film Of Silicon Carbide Grown On Sapphire With A Nitride Buffer Layer

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Step-controlled epitaxial growth of SiC: High quality homoepitaxy