Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

High quality and wafer-scale cubic silicon carbide single crystals

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

Kinetic Monte Carlo method for epitaxial 3C-SiC (0001) growth on vicinal surfaces

Layered Growth Modelling of Epitaxial Growth Processes for SiC Polytypes

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Silicon Carbide: Progress in Crystal Growth

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Epitaxial growth of SiC on (100) Diamond

High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

Review of SiC crystal growth technology

3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Growth of High-Quality 4H-Sic Epitaxial Layers on 4° Off-Axis C-face 4H-Sic Substrates