Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms

Defect-driven tunable electronic and optical properties of two-dimensional silicon carbide

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide langmuir-blodgett films on silicon substrate

Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method

Electrochemical Properties and Applications of Nanocrystalline, Microcrystalline, and Epitaxial Cubic Silicon Carbide Films

Low-Dimensional Sic Nanostructures: Fabrication, Luminescence, and Electrical Properties

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Recent Progress on Single-Crystal Growth and Epitaxial Growth of 4H Silicon Carbide

Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide

Epitaxial growth of SiC on (100) Diamond

Electronic Structures and Optical Properties of 6H-and 3C-Sic Microstructures and Nanostructures from X-Ray Absorption Fine Structures, X-Ray Excited Optical Luminescence, and Theoretical Studies

High quality and wafer-scale cubic silicon carbide single crystals

Silicon carbide: from amorphous to crystalline material

Bottom-up growth of monolayer honeycomb SiC

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Mechanism of SiC formation by Si surface carbonization using CO gas