Abstract:Due to the lack of appropriate experimental methods for imaging the evolution of the microstructure of materials at the growth conditions, our understanding of the physical behavior of crystal growth and defect formation during the vapor deposition growth of SiC crystals is still rather limited. In the present work, the vapor deposition growth of SiC crystal on a 4H-SiC substrate has been investigated by the molecular dynamics (MD) computer simulation method. Three different lattice planes of 4H-SiC ((0001), (112-0) and (1-100)) were selected as the surface of the substrate, and three different temperatures for substrate (2200 K, 2300 K and 2400 K) were used in growth simulations. The characteristics of the formation of different polytypes of SiC and dislocations in the grown crystals were examined. The results show that the SiC crystals were grown by a subsurface nucleation and growth mode in the vapor deposition process. For substrates with (0001) plane as the surface, the 3C-SiC single crystal was obtained in the deposited thin film. For substrates with (112-0) or (1-100) plane as the surface, the 4H-SiC single crystal was obtained instead. The temperature of the substrate was found to have a significant effect on the dislocation density generated in the grown crystals. The mechanism for the formation of Frank partial dislocations during the growth of SiC crystals has been analyzed, for which the importance of the diffusivity of atoms on the surface layer in growth has been highlighted, and it gives a good explanation of the temperature effect on dislocation formation in the grown crystals. These results can be helpful for experimental vapor deposition growth of SiC single crystals and epitaxial layers of high quality.

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films

Structural Characteristics of 3c–sic Thin Films Grown on Si-face and C-face 4h–sic Substrates by High Temperature Chemical Vapor Deposition

Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

SiC Epitaxial Layers Grown by Chemical Vapor Deposition

Vapor Deposition Growth of SiC Crystal on 4H-SiC Substrate by Molecular Dynamics Simulation

Growth of SiC Buffers for Strained Si Film Epitaxy

Homoepitaxial 6H-Sic Thin Films by Vapor-Liquid-Solid Mechanism

A step-by-step experiment of 3C-SiC hetero-epitaxial growth on 4H-SiC by CVD

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

[P97] Computational Investigations of the CVD Process

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Multi-length Scale Monte Carlo Simulation of the Growth Process of SiC Film by Chemical Vapor Deposition

A Multiscale Model for CVD Growth of Silicon Carbide

Atomic Scale Simulation of {111}-Oriented SiC Film Growth by Chemical Vapor Deposition Method: Atomic Scale Simulation of {111}-Oriented SiC Film Growth by Chemical Vapor Deposition Method

Epitaxial Growth and Microstructure of Cubic Sic Films on Si Substrates

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

Numerical Simulation of the Growth Characteristics of Laser Chemical Vapor Deposition of Silicon Carbide

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition